Zirconia ultrafiltration membranes on silicon carbide substrate: microstructure and water flux

This study reported the preparation of ZrO2/SiC ceramic membrane with silicon carbide as the substrate and intermediate layers and zirconia as the selective layer. The substrate and intermediate layers were sintered by evaporation-condensation process at 2200 and 1900 degrees C, respectively. After sintering, the intermediate layer presented layer thickness of 50 mu m, pore size of 0.87 mu m and pure water permeability of 2140 L/(m(2).h). The selective lay was deposited on the silicon carbide substrate by dip-coating method and then sintered in the temperature range from 800 to 1000 degrees C. For the membrane coated by one dip-coating cycle and sintered at 800 degrees C, it presented average pores of 82 nm and water flux of 850 L/(m(2).h). Due to the exclusion of low-melting oxides during sintering, the ZrO2/SiC ceramic membrane can satisfy the separation and purification of chemical corrosion and high temperature wastewater.