MOVPE growth of GaAs with growth rates up to 280 µm/h

标题

作者

关键词

A1. High growth rates, A3. Metalorganic vapor phase epitaxy, B2. Semiconducting gallium arsenide, B2. Semiconducting III-V materials

出版物

Volume 537, Issue -, Pages 125601

出版商

Elsevier BV

发表日期

2020-03-10

DOI

10.1016/j.jcrysgro.2020.125601

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