Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

标题
Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor
作者
关键词
-
出版物
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 56, Issue 3, Pages 2880-2893
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2020-02-11
DOI
10.1109/tia.2020.2972816

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