期刊
CERAMICS INTERNATIONAL
卷 42, 期 13, 页码 14543-14547出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2016.06.067
关键词
CIGS; Quaternary target; RF magnetron sputtering; Stoichiometric ratio; Thin film solar cell
资金
- Department of Education of Guangdong Province [2013CXZDA002]
- Guangdong Science and Technology Department [2014A010106009]
Cu(In1-xGax)Se-2 (CIGS) thin films were prepared by RF magnetron sputtering from a single quaternary target at multiple processing parameters. The structural, compositional, and electrical properties of the as-deposited films were systematically investigated by XRD, Raman, SEM, and Hall effects analysis. The results demonstrate that by adjusting the processing parameters, the CIGS thin films with a preferential orientation along the (112) direction which exhibited single chalcopyrite phase were obtained. The films deposited at relatively higher substrate temperature, sputtering power, and Ar pressure exhibited favorable stoichiometric ratio (Cu/(In+Ga):0.8-0.9 and Ga/(In+Ga):0.25-0.36) with grain size of about 1-1.5 gm, and desirable electrical properties with p-type carrier concentration of 10(16)-10(17) cm(-3) and carrier mobility of 10-60 cm(2)/Vs. The CIGS layers are expected to fabricate high efficiency thin film solar cells. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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