期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 5, 页码 717-720出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2985292
关键词
Electron traps; Logic gates; Dielectrics; Hafnium compounds; Dielectric measurement; Silicon; Semiconductor device measurement; Electronic traps; metal insulator semiconductor (MIS); energy level (EIL); silicon conduction band (Si ECB)
资金
- Center for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bengaluru, India
Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance-voltage (CV) curve as well as flatband voltage (VFB) measure in <10 mu s due to injection or ejection of electrons through the metal gate. Using this method, an electronic trap energy distribution was measured in the HfO2 dielectric film and it confirms a maximum number of traps (Delta N-T) of 1.7 x 10(12) cm(-2) corresponding to an energy level (Delta E-IL) of 0.45 eV above silicon conduction band (Si-ECB). In comparison, ZrO2-based MIS devices showed a broader distribution of electronic traps throughout the band gap. However, HfO2 containedmore than 60% traps in deep levelcompared to 50% in ZrO2, which establishes the effects of material variation.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据