Increased electrical conduction with high hole mobility in anti-ThCr2Si2-type La2O2Bi via oxygen intercalation adjacent to Bi square net

标题
Increased electrical conduction with high hole mobility in anti-ThCr2Si2-type La2O2Bi via oxygen intercalation adjacent to Bi square net
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 116, Issue 19, Pages 191901
出版商
AIP Publishing
发表日期
2020-05-11
DOI
10.1063/5.0005300

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