期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 22, 页码 24978-24983出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c03206
关键词
multilayer InSe; In(1-x)G(x)Se alloys; heterostructure; diode; photodetector
资金
- National Natural Science Foundation of China (NSFC) [51802038]
- China Postdoctoral Science Foundation [2019T120246, 2018M630329]
- Heilongjiang Postdoctoral Special Fund [LBH-TZ1801]
Multilayer InSe is a promising material for high-performance optoelectronic applications because of its small direct band gap and good light absorption. However, as a photoconductive photodetector, multilayer InSe photodetectors endure large dark current and high driving power. In this work, we study the electrical properties of InGaSe alloys and demonstrate the high-performance devices based on multilayer InSe-In0.24Ga0.76Se van der Waals heterojunctions (vdWHs). The electrical properties of InGaSe alloy samples strongly depend on the ratio of In to Ga, and the In0.24Ga0.76Se alloy shows a p-type transport behavior. More importantly, a multilayer InSe-In0.24Ga0.76Se vdWH device is demonstrated as a high-performance forward diode, photodiode, and self-powered photodetector (SPPD). The multilayer InSe-In0.24Ga0.76Se diode shows a high forward rectification ratio of over 10(3) without gate modulation at room temperature, which is superior to most of the multilayer vdWH devices. Moreover, the vdWH photodiode has a broadband photoresponse spectrum (400-1000 nm) and a high-performance photoresponse. The light switching ratio, detectivity (D*), and responsivity (R) are 10(3), 10(12) Jones, and 49 A W-1 for 400 nm illumination, respectively. Furthermore, the vdWH SPPD also shows a sensitive photoresponse to a broadband spectrum of 400-1000 nm. Our work offers an opportunity for multilayer vdWH device applications in high-performance electronic and optoelectronic devices.
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