期刊
CARBON
卷 100, 期 -, 页码 608-616出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2016.01.064
关键词
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资金
- DGIST RAMP
- D Program - Ministry of Science, ICT and Future Planning of the Korean government [15-EN-01]
- Ministry of Science, ICT & Future Planning, Republic of Korea [15-EN-01] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Simultaneous reduction and doping of the graphene oxide (GO) is an important issue for low temperature processed flexible electronic devices. A low temperature method for reduction and ambipolar doping has been developed which yield the doped reduced GO with wide range of work function with a mass production using tetra-methyl ammonium hydroxide (TMAH). The doping type of obtained reduced GO is tuned with TMAH concentration. XPS analysis revealed that the graphitic N is converted to oxidized N with increase of TMAH concentration. The work function is tuned via wide range variation in the carrier concentration in neutral (rGO-A, 4.46 eV), n-type (rGO-B, 3.90 eV) and p-type (rGO-C, 5.29 eV) regimes. The obtained Dirac voltages of field effect devices are 1 V, 31 V and broken vertical bar 35 V with active layer of rGO-A, rGO-B and rGO-C, respectively. The n-type doping is due to incorporation of graphitic N, whereas, oxidized N acts as electron withdrawing group which causes p-type doping. (C) 2016 Elsevier Ltd. All rights reserved.
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