期刊
PHYSICAL REVIEW MATERIALS
卷 4, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.4.025002
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资金
- EPSRC Centre for Doctoral Training in Condensed Matter Physics (CDT-CMP) [EP/L015544/1]
- Bristol NanoESCA Facility (EPSRC) [EP/K035746/1, EP/M000605/1]
- EPSRC [EP/K035746/1, EP/M000605/1] Funding Source: UKRI
We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (T-g < 630 degrees C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature T-CDW = (112.7 +/- 0.8) K and maximum residual resistance ratio RRR approximate to 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.
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