标题
Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors
作者
关键词
-
出版物
Electronics
Volume 9, Issue 2, Pages 254
出版商
MDPI AG
发表日期
2020-02-04
DOI
10.3390/electronics9020254
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
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- High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering
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