Hidden spin-polarized bands in semiconducting 2H-MoTe2

Direct and indirect optical transitions in bulk and atomically thin MoS2 studied by photoreflectance and photoacoustic spectroscopy

(2019) J. Kopaczek et al.   JOURNAL OF APPLIED PHYSICS

Computational screening of high-performance optoelectronic materials using OptB88vdW and TB-mBJ formalisms

(2018) Kamal Choudhary et al.   Scientific Data

Optical and electronic properties of 2H−MoS2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

(2018) Mauro Brotons-Gisbert et al.   PHYSICAL REVIEW MATERIALS

Valley-contrasting optics of interlayer excitons in Mo- and W-based bulk transition metal dichalcogenides

(2018) Ashish Arora et al.   Nanoscale

Magnetism in semiconducting molybdenum dichalcogenides

(2018) Z. Guguchia et al.   Science Advances

Pressure-dependent semiconductor to semimetal and Lifshitz transitions in 2H-MoTe2: Raman and first-principles studies

(2017) Achintya Bera et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Selective Probing of Hidden Spin-Polarized States in Inversion-Symmetric Bulk MoS2

(2017) E. Razzoli et al.   PHYSICAL REVIEW LETTERS

Interlayer excitons in a bulk van der Waals semiconductor

(2017) Ashish Arora et al.   Nature Communications

Photoacoustic and modulated reflectance studies of indirect and direct band gap in van der Waals crystals

(2017) Szymon J. Zelewski et al.   Scientific Reports

Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS2 films

(2016) Kuang-I Lin et al.   JOURNAL OF APPLIED PHYSICS

Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2

(2016) J. Kopaczek et al.   JOURNAL OF APPLIED PHYSICS

Spin–valley locking in the normal state of a transition-metal dichalcogenide superconductor

(2016) L. Bawden et al.   Nature Communications

Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

(2016) F. Dybała et al.   Scientific Reports

H-point exciton transitions in bulk MoS2

(2015) Nihit Saigal et al.   APPLIED PHYSICS LETTERS

Exciton band structure in layered MoSe2: from a monolayer to the bulk limit

(2015) Ashish Arora et al.   Nanoscale

k·ptheory for two-dimensional transition metal dichalcogenide semiconductors

(2015) Andor Kormányos et al.   2D Materials

Spin and pseudospins in layered transition metal dichalcogenides

(2014) Xiaodong Xu et al.   Nature Physics

Hidden spin polarization in inversion-symmetric bulk crystals

(2014) Xiuwen Zhang et al.   Nature Physics

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor

(2014) J. M. Riley et al.   Nature Physics

Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides

(2013) A. Carvalho et al.   PHYSICAL REVIEW B

Polarized light boosts valleytronics

(2012) Kamran Behnia   Nature Nanotechnology

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

(2010) Stefan Grimme et al.   JOURNAL OF CHEMICAL PHYSICS

ABINIT: First-principles approach to material and nanosystem properties

(2009) X. Gonze et al.   COMPUTER PHYSICS COMMUNICATIONS

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

(2009) Fabien Tran et al.   PHYSICAL REVIEW LETTERS