期刊
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
卷 8, 期 1, 页码 626-643出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JESTPE.2019.2953730
关键词
Electromagnetic interference (EMI); gallium nitride (GaN); packaging optimization; power module; silicon carbide (SiC); wide-bandgap (WBG) devices
资金
- National Science Foundation [1540118]
Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts. However, their fast switching speed and the ability to operate at high frequencies brought new challenges, among which the electromagnetic interference (EMI) is one of the major concerns. Many works investigated the structures of WBG power devices and their switching performance. In some cases, the conductive or radiated EMI was measured. However, the EMI-related topics, including their influence on noise sources, noise propagation paths, EMI reduction techniques, and EMC reliability issues, have not yet been systematically summarized for WBG devices. In this article, the literature on EMI research in power electronics systems with WBG devices is reviewed. Characteristics of WBG devices as EMI noise sources are reviewed. EMI propagation paths, near-field coupling, and radiated EMI are surveyed. EMI reduction techniques are categorized and reviewed. Specifically, the EMI-related reliability issues are discussed, and solutions and guidelines are presented.
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