期刊
NANOMATERIALS
卷 10, 期 2, 页码 -出版社
MDPI
DOI: 10.3390/nano10020277
关键词
graphene quantum dots; silicon carbide; hydrogen-assisted pyrolysis; high-quality
类别
资金
- National Research Foundation of Korea (NRF) - Korea government [NRF-2017M2A2A6A02070697]
- National Research Foundation of Korea [21A20130012538] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Graphene quantum dots (GQDs) can be highly beneficial in various fields due to their unique properties, such as having an effective charge transfer and quantum confinement. However, defects on GQDs hinder these properties, and only a few studies have reported fabricating high-quality GQDs with high crystallinity and few impurities. In this study, we present a novel yet simple approach to synthesizing high-quality GQDs that involves annealing silicon carbide (SiC) under low vacuum while introducing hydrogen (H) etching gas; no harmful chemicals are required in the process. The fabricated GQDs are composed of a few graphene layers and possess high crystallinity, few defects and high purity, while being free from oxygen functional groups. The edges of the GQDs are hydrogen-terminated. High-quality GQDs form on the etched SiC when the etching rates of Si and C atoms are monitored. The size of the fabricated GQDs and the surface morphology of SiC can be altered by changing the operating conditions. Collectively, a novel route to high-quality GQDs will be highly applicable in fields involving sensors and detectors.
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