期刊
VACUUM
卷 173, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2019.109149
关键词
Ion beam irradiation; Radiation damage; GaN; Defects; Co-implantation
资金
- Russian Foundation for Basic Research [18-08-01213]
We present the results of investigation of radiation damage accumulation in GaN during its sequential co-implantation with fluorine ions of two different energies. This process is proved to be a non-commutative one, i.e. a clear difference in the amount of resulting damage is found, that depends on the sequence of the energy of bombarding ions used. Possible mechanism of the effect revealed is proposed and discussed. This mechanism also explains well experimentally established saturation of the bulk defect peak height in gallium nitride at a level remarkably below the full amorphization.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据