Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices

标题
Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices
作者
关键词
-
出版物
SCRIPTA MATERIALIA
Volume 174, Issue -, Pages 87-90
出版商
Elsevier BV
发表日期
2019-09-04
DOI
10.1016/j.scriptamat.2019.08.029

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