4.7 Article

Broadband photodetector based on vertically stage-liked MoS2/Si heterostructure with ultra-high sensitivity and fast response speed

期刊

SCRIPTA MATERIALIA
卷 176, 期 -, 页码 1-6

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2019.09.030

关键词

Heterostructure; Photodetector; Rapid annealing; Fast response speed

资金

  1. Open Fund of the State Key Laboratory of Luminescent Materials and Devices [2018-skllmd-06]
  2. National Natural Science Foundation of China [61804023]
  3. Key R&D Program of Sichuan Province [2018GZ0527]

向作者/读者索取更多资源

We report a broadband photodetector based on vertically stage-liked MoS2/Si heterostructure with MoS2 sheet modified using rapid annealing technique. The fabricated photodetector features a unique structure of naturally formed band alignment in MoS2 after annealing and shows an ultra-high responsivity up to 746 mA W-1 and detectivity up to 6.03 x 10(11) Jones ranging from 405 to 980 nm, as well exhibits a fast response speed with a rise time of similar to 178 mu s and fall time of similar to 198 mu s. The demonstrated superb photodetector suggests an effective way to form vertical p-n junction for improving the performances of future optoelectronic devices. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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