期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 257, 期 5, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201900669
关键词
atomic arrangements; crystal orientations; NiO; beta-Ga2O3
资金
- JSPS KAKENHI [JP17K05042]
The crystal orientation relationship between cubic NiO and monoclinic beta-Ga2O3 in NiO thin films formed on (2 over bar 01), (010), and (001) beta-Ga2O3 substrates is investigated by X-ray diffraction analysis and cross-sectional transmission electron microscopy imaging. The NiO films formed on (2 over bar 01) and (010) beta-Ga2O3 substrates satisfy the orientation relationships NiO (111) [01 over bar 1] || beta-Ga2O3(2 over bar 01) [010] and NiO (110) [1 over bar 10] || beta-Ga2O3 (010) [001], respectively. In the NiO films on (001) beta-Ga2O3 substrates, the NiO plane near (133) is parallel to the (001) plane of beta-Ga2O3 under the relationship NiO [01 over bar 1] || beta-Ga2O3 [010]. In addition, NiO films also satisfy the relationship NiO (100) || beta-Ga2O3 (100) in each case. That is, for each case of (2 over bar 01), (010), and (001) beta-Ga2O3 substrates, the relationship of NiO (100) [011] || beta-Ga2O3 (100) [001] is confirmed, consistent with the orientation relationship reported previously for NiO films on (100) beta-Ga2O3 substrates. The crystal orientation relationship is discussed in terms of the atomic arrangement models of NiO and beta-Ga2O3.
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