4.6 Article

Enhanced interfacial Dzyaloshinskii-Moriya interactions in annealed Pt/Co/MgO structures

期刊

NANOTECHNOLOGY
卷 31, 期 15, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab62cd

关键词

Dzyaloshinskii-Moriya interaction (DMI); inserted layer; annealing; domain-walls (DW)

资金

  1. National Natural Science Foundation of China [61627813, 61571023]
  2. National Key Technology Program of China [2017ZX01032101]
  3. Program of Introducing Talents of Discipline to Universities in China [B16001]
  4. VR innovation platform from the Qingdao Science and Technology Commission
  5. China Scholarship Council

向作者/读者索取更多资源

The interfacial Dzyaloshinskii-Moriya interaction (iDMI) is attracting great interest for spintronics. An iDMI constant larger than 3 mJ m(-2) is expected to minimize the size of skyrmions and to optimize the domain-wall dynamics. In this study, we experimentally demonstrate a giant iDMI in Pt/Co/X/MgO ultra-thin film structures with perpendicular magnetization. The iDMI constants were measured using a field-driven creep regime domain expansion method. The enhancement of iDMI with an atomically thin insertion of Ta and Mg is comprehensively understood with the help of ab-initio calculations. Thermal annealing has been used to crystallize the MgO thin layer to improve the tunneling magneto-resistance (TMR), but interestingly it also provides a further increase of the iDMI constant. An increase of the iDMI constant of up to 3.3 mJ m(-2) is shown, which is promising for the scaling down of skyrmion electronics.

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