Electrical conductivity tuning in p-type transparent conducting AgGaO2 and in quaternary AgInGaO2 thin films

We report tuning of electrical conductivity in a wide range from 10(-2) to 10(+3) S/m in p-type transparent conducting thin films of silver gallium oxide and in the quaternary films of silver indium gallium oxide. The conductivity tailoring is correlated with changes in carrier concentration and mobility induced by compositional variations and indium incorporation. The achievement of crystallization of the films at a temperature similar to 623 +/- 5 K, the lowest temperature of crystallization for AGO so far reported, enhances the technological importance of the study. Tuning of optical band gap from 3.62 eV to 3.77 eV for AIGO and 3.98 eV-4.01 eV for AGO is realized by adjusting the composition.