4.6 Article

Control of spin and valley Hall effects in monolayer transition metal dichalcogenides by magnetic proximity effect

期刊

JOURNAL OF APPLIED PHYSICS
卷 127, 期 2, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.5118327

关键词

-

资金

  1. National Natural Science Foundation of China (NSFC) [NSFC91750112, 11374162, 51651202, 11504178, 11774179]
  2. Jiangsu Specially Appointed Professor Plan [RK033STP16002]
  3. Natural Science Foundation of Jiangsu Province [BK20150825, BK20161513]
  4. Six Categories of Summit Talents of Jiangsu Province of China [2016-JNHB-060]
  5. Training program of the Key and Major Research plan of NUPT [NY217166]
  6. NUPTSF [NY215027]
  7. Major Program of Natural Science Foundation by the Ministry of Education of China [TJ215009]
  8. 1311 Plan

向作者/读者索取更多资源

Monolayer transition metal dichalcogenides have strong spin-orbit coupling and broken space inversion symmetry, which enable them to be the key building blocks in realizing spin and valley-related effects. Here, we report the spin and valley Hall conductivities of monolayer transition metal dichalcogenides in the presence of the magnetic proximity effect, which is introduced by a ferromagnetic substrate. It is found that the profile and magnitude of the spin and valley Hall conductivities in monolayer transition metal dichalcogenides are different with and without magnetic exchange interactions. This difference can be attributed to the asymmetrical band structure of monolayer transition metal dichalcogenides and chemical potential-dependent interband transitions. The former comes from the fact that the magnetic proximity effect can effectively break the time reversal symmetry and thus lead to the asymmetry of the band structures between K+ and K- valleys, which causes the final changes in the spin and valley Hall conductivities. Our findings demonstrate that the magnetic proximity effect can affect the spin as well as valley Hall behaviors in monolayer transition metal dichalcogenides, and this strategy is applicable for other two-dimensional layered materials, which is promising for spintronic and valleytronic devices.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据