An analysis of defects induced by high dose γ-ray irradiation and their influence on the charge transport properties in CdZnTe detectors

标题
An analysis of defects induced by high dose γ-ray irradiation and their influence on the charge transport properties in CdZnTe detectors
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 127, Issue 2, Pages 024501
出版商
AIP Publishing
发表日期
2020-01-09
DOI
10.1063/1.5126792

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