期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 55, 期 6, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2019.2941578
关键词
Photonic crystals; Indium phosphide; Cavity resonators; Q-factor; III-V semiconductor materials; Optical waveguides; Silicon; Photonic integrated circuits; nanophotonics; photonic crystals
资金
- ERC Advanced Grant NOLIMITS
- Dutch Zwaartekracht Grant
We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-Perot cavities. We experimentally show reflectivities higher than 95% for the reflectors and a quality factor as high as 15,911 +/- 511 for a Fabry-Perot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-Perot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据