Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current

出版年份 2020 全文链接

标题

Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current

作者

关键词

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出版物

IEEE ELECTRON DEVICE LETTERS

Volume 41, Issue 2, Pages 220-223

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-01-02

DOI

10.1109/led.2019.2963428

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