期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 3, 页码 401-404出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2965402
关键词
High mobility; transparent flexible electronics; oxide thin film transistor; dual gate structure
资金
- Korea Display of the Ministry of Trade, Industry, and Energy [10051403]
- Research Corporation (KDRC)
- National Research Foundation of Korea (NRF) - Ministry of Education [2017R1D1A1B03030818]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10051403] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2017R1D1A1B03030818] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
High mobility thin film transistors (TFTs) based on zinc oxynitride (ZnON) semiconductor were fabricated onto polyethylene-2.6-naphthalate (PEN) substrates. The application of a dual gate structure enhanced the field-effect mobility from 65.8 to 147 cm(2)/ $\text{V}\cdot \text{s}$ , which is generally attributed to the bulk accumulation effect. Dual gate driving also results in improved device stability with respect to bias and illumination stress. This is most likely due to the fact that the bulk channel confines the charge carriers away from the semiconductor-dielectric interfaces, where charge trapping is anticipated. The electrical performance of dual gate devices did not change significantly after 5,000 bending cycles, while the single gate transistors exhibited clear degradation.
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