Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode With Improved On-Current and Ideality Factor

出版年份 2020 全文链接

标题

作者

关键词

出版物

Volume 41, Issue 3, Pages 457-460

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-01-21

DOI

10.1109/led.2020.2967895

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