Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m$\Omega\cdot$ cm2/1500 V GaN Diodes

出版年份 2019 全文链接

标题

作者

关键词

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 41, Issue 2, Pages 264-267

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2019-12-18

DOI

10.1109/led.2019.2960349

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IEEE ELECTRON DEVICE LETTERS

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