期刊
APPLIED SURFACE SCIENCE
卷 506, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2019.145008
关键词
Acceptor-rich ZnO microtube; n-ZnS; p-CuO; Heterojunction; Hierarchical structure; Photodegradation
类别
资金
- National Natural Science Foundation of China [11674018]
- Beijing Nova Program [Z171100001117101]
- Young Talent Program of Beijing Municipal Commission of Education
The intrinsic acceptor-rich ZnO (A-ZnO) microtubes fabricated by optical vaporization supersaturated precipitation (OVSP) are compatible to microfluidic channel for on-chip photodegradation. Unfortunately, the micron size and weak charge separation ability in bare A-ZnO microtube limit its degradation rate. Design of heterojunction structure is a feasible way to improve the photocatalytic performance by efficient separation of photogenerated carriers. Here we synthesize p-CuO and n-ZnS nanostructures on A-ZnO microtubes, respectively, achieving various hierarchical heterojunctions. The massive Zn-vacancy-related shallow acceptor carries in A-ZnO as well as the similar bandgap and crystal structure of A-ZnO/n-ZnS achieve the highest photodegradation efficiency up to 0.105 min(-1). It is about twice and triple higher than bare A-ZnO microtubes and n-ZnO nanoparticles, respectively. The formed type II heterojunction in A-ZnO/n-ZnS boosts the charge separation superior to other ZnO-based heterojunction. The present work paves a new way to the tubular A-ZnO-based hierarchical heterojunction with n-type wide-bandgap semiconductors for high-performance optoelectronic devices.
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