Ferroelectric memory field-effect transistors using CVD monolayer MoS2 as resistive switching channel
出版年份 2020 全文链接
标题
Ferroelectric memory field-effect transistors using CVD monolayer MoS2 as resistive switching channel
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 116, Issue 3, Pages 033501
出版商
AIP Publishing
发表日期
2020-01-22
DOI
10.1063/1.5129963
参考文献
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