期刊
ADVANCED MATERIALS
卷 32, 期 9, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201906499
关键词
cetyltrimethyl ammonium bromides (CTAB); chemical doping; lateral p-n homojunction; optoelectronics; transition metal dichalcogenides (TMDs)
类别
资金
- National Science Foundation of China [51672016, 51601006]
As unique building blocks for next-generation optoelectronics, high-quality 2D p-n junctions based on semiconducting transition metal dichalcogenides (TMDs) have attracted wide interest, which are urgent to be exploited. Herein, a novel and facile electron doping of WSe2 by cetyltrimethyl ammonium bromide (CTAB) is achieved for the first time to form a high-quality intramolecular p-n junction with superior optoelectronic properties. Efficient manipulation of charge carrier type and density in TMDs via electron transfer between Br- in CTAB and TMDs is proposed theoretically by density functional theory (DFT) calculations. Compared with the intrinsic WSe2 photodetector, the switching light ratio (I-light/I-dark) of the p-n junction device can be enhanced by 10(3), and the temporal response is also dramatically improved. The device possesses a responsivity of 30 A W-1, with a specific detectivity of over 10(11) Jones. In addition, the mechanism of charge transfer in CTAB-doped 2D WSe2 and WS2 are investigated by designing high-performance field effect transistors. Besides the scientific insight into the effective manipulation of 2D materials by chemical doping, this work presents a promising applicable approach toward next-generation photoelectronic devices with high efficiency.
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