期刊
ACS NANO
卷 14, 期 3, 页码 2860-2868出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b06345
关键词
integrations; CH3NH3PbBr3; single-crystal perovskites; ultrafast; photodetectors
类别
资金
- National Key RD Program [2016YFA0200400, 2016YFA0200300]
- National Natural Science Foundation [51861145202, 61874065, 61574083, 61434001]
- National Basic Research Program [2015CB352101]
- Special Fund for Agroscientific Research in the Public Interest of China [201303107]
- Young Elite Scientists Sponsorship Program by CAST [2018QNRC001]
- Independent Research Program of Tsinghua University [2014Z01006]
- Shenzhen Science and Technology Program [JCYJ20150831192224146]
Single-crystal (SC) perovskite is currently a promising material due to its high quantum efficiency and long diffusion length. However, the reported perovskite photodetection range (<800 nm) and response time (>10 mu s) are still limited. Here, to promote the development of perovskite-integrated optoelectronic devices, this work demonstrates wider photodetection range and shorter response time perovskite photodetector by integrating the SC CH3NH3PbBr3 (MAPbBr(3)) perovskite on silicon (Si). The Si/MAPbBr(3) heterojunction photodetector with an improved interface exhibits high-speed, broad-spectrum, and long-term stability performances. To the best of our knowledge, the measured detectable spectrum (405-1064 nm) largely expands the widest response range reported in previous perovskite-based photodetectors. In addition, the rise time is as fast as 520 ns, which is comparable to that of commercial germanium photodetectors. Moreover, the Si/MAPbBr(3) device can maintain excellent photocurrent performance for up to 3 months. Furthermore, typical gray scale face imaging is realized by scanning the Si/MAPbBr(3) single-pixel photodetector. This work using an ultrafast photodetector by directly integrating perovskite on Si can promote advances in next-generation integrated optoelectronic technology.
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