期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 8, 页码 9409-9420出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b17680
关键词
nonpervoskite; CsPbI3; resistive switching; memory devices; Schottky barrier; ion migration
资金
- National Natural Science Foundation of China [51772095]
- Fundamental Research Funds for the Central Universities [2018MS040, 2018ZD07, JB2018135]
Because of their attractive photoelectrical properties, perovskite-phase, CsPbX3 (X = I, Br, or Cl) materials have recently gained attention for their applications in resistive switching (RS) memories. However, phase transition of the CsPbI3 from perovskite (cubic phase) to nonperovskite (ortho-rhombic phase) at room temperature is problematic; it remains a challenge to apply nonperovskite CsPbI3 in RS memories. In the present work, a polymethylmethacrylate (PMMA)-assisted deposition method for nonperovskite CsPbI3 is introduced to fabricate a composite film of CsPbI3 with PMMA (PMMA@CsPbI3) with a smooth surface morphology on fluorine-doped tin oxide (FTO) substrates. Devices with a Ag/PMMA@CsPbI3/FTO architecture show nonvolatile RS characteristics with an ON/OFF ratio around 10(2), endurance over 500 cycles, and a retention time of 10(3) s. Analyses suggested that a Schottky barrier at the Ag/PMMA@CsPbI3 interface and a bias-induced migration of Ag ions within the composite films are responsible for the RS operation. This is the first record for RS devices based on nonperovskite CsPbI3, and it may bring the future research on nonperovskite CsPbI3 applied in RS memory devices some new inspiration..
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据