Nonvolatile Memory and Artificial Synapse Based on the Cu/P(VDF-TrFE)/Ni Organic Memtranstor

We demonstrate a flexible nonvolatile multilevel memory and artificial synaptic devices based on the Cu/P(VDF-TrFE)/Ni memtranstor which exhibits pronounced nonlinear magnetoelectric effects at room temperature. The states of the magnetoelectric voltage coefficient a 2 of the memtranstor are used to encode binary information. By applying selective electric-field pulses, the states of alpha(E) can be switched repeatedly among 2 '' states (n = 1, 2, 3) in a zero dc bias magnetic field. In addition, the magnetoelectric coefficient is used to act as synaptic weight, and the induced magnetoelectric voltage V-ME is regarded as postsynaptic potentials (excitatory or inhibitory). The artificial synaptic devices based on the Cu/P(VDF-TrFE)/Ni memtranstor display the long-term potentiation (depression) and spiking-time-dependent plasticity behaviors. The advantages of a simple structure, flexibility, multilevel, and self-biasing make the Cu/P(VDF-TrFE)/Ni organic memtranstor a promising candidate for applications in nonvolatile memory as well as artificial synaptic devices with low energy consumption.