期刊
ACS OMEGA
卷 4, 期 24, 页码 20756-20761出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsomega.9b03149
关键词
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资金
- ASCENT, one of six centers in JUMP, a Semiconductor Research Corporation Program through DARPA
- Office of Naval Research's Naval Enterprise Partnership Teaming with Universities for National Excellence [N00014-15-1-2833]
- U.S. National Science Foundation [DMR-1565822]
- National Research Foundation of Korea through the Ministry of Education [2018R1A6A3A03013435]
- National Research Foundation of Korea [2018R1A6A3A03013435] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Herein, we present a solar-blind ultraviolet photodetector realized using atomic layer-deposited p-type cuprous oxide (Cu2O) underneath a mechanically exfoliated n-type beta-gallium oxide (beta-Ga2O3) nanomembrane. The atomic layer deposition process of the Cu2O film applies bis(N,N'-di-secbutylacetamidinato)dicopper(I) [Cu(Bu-5-Me-amd)](2) as a novel Cu precursor and water vapor as an oxidant. The exfoliated beta-Ga2O3 nanomembrane was transferred to the top of the Cu2O layer surface to realize a unique oxide pn heterojunction, which is not easy to realize by conventional oxide epitaxy techniques. The current-voltage (I-V) characteristics of the fabricated pn heterojunction diode show the typical rectifying behavior. The fabricated Cu2O/beta-Ga2O3 photodetector achieves sensitive detection of current at the picoampere scale in the reverse mode. This work provides a new approach to integrate all oxide heterojunctions using membrane transfer and bonding techniques, which goes beyond the limitation of conventional heteroepitaxy.
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