Piezopotential in a composite cantilever of piezoelectric dielectrics and nonpiezoelectric semiconductors produced by shear force through e15

Wepropose a specific composition of a beam of a piezoelectric dielectric layer sandwiched between two nonpiezoelectric semiconductor layers. A one-dimensional theoretical model is established for the bending of the beam with shear deformation. A theoretical analysis of a cantilever of such a beam under an end shear force is performed. Results show that an axial electric field develops in the beam because of the shear deformation accompanying bending via the piezoelectric constant e(15). The axial electric field drives the charge carriers to the two ends of the beam. Thus the proposed composite beam can be used as a new and basic structure with potential applications in piezotronics when the shear force is present or dominant, differing from the homogeneous beam and the composite beam using e(33) in the literature which are more suitable when bending moment is dominant.