期刊
MATERIALS
卷 12, 期 19, 页码 -出版社
MDPI
DOI: 10.3390/ma12193236
关键词
memristive characteristic; amorphous Ga-Sn-O (alpha-GTO); thin-film device; oxygen density
类别
资金
- Support Center for Advanced Telecommunications Technology Research, Yazaki Memorial Foundation for Science and Technology [16K06733, 19K11876]
- Telecommunications Advancement Foundation
- Mitsubishi Foundation
- KOA Corporation
- Laboratory for Materials and Structures in Tokyo Institute of Technology
- RIEC Nation-wide Cooperative Research Projects in Tohoku University
We have found a memristive characteristic of an amorphous Ga-Sn-O (alpha-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for the upper layer contains more oxygen, and it is assumed that the former contains more oxygen vacancies, whereas the latter contains fewer vacancies. The characteristic is explained by drift of oxygen and is stable without forming operation because additional structures such as filament are unnecessary. The fabrication is easy because the double layers are successively deposited simply by changing the oxygen ratio in the chamber.
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