4.8 Article

Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe

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PHYSICAL REVIEW LETTERS
卷 123, 期 17, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.123.176401

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  1. Netherlands Organization for Scientific Research (NWO) [14TWOD01]
  2. [17-72-20041]
  3. Russian Science Foundation [17-72-20041] Funding Source: Russian Science Foundation

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We show that hole states in recently discovered single-layer InSe are strongly renormalized by the coupling with acoustic phonons. The coupling is enhanced significantly at moderate hole doping (similar to 10(13) cm(-2)) due to hexagonal warping of the Fermi surface. While the system remains dynamically stable, its electron-phonon spectral function exhibits sharp low-energy resonances, leading to the formation of satellite quasiparticle states near the Fermi energy. Such many-body renormalization is predicted to have two important consequences. First, it significantly suppresses charge carrier mobility reaching similar to 1 cm(2) V-1 s(-1) at 100 K in a freestanding sample. Second, it gives rise to unusual temperature-dependent optical excitations in the midinfrared region. Relatively small charge carrier concentrations and realistic temperatures suggest that these excitations may be observed experimentally.

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