4.8 Article

Chemical Reactions Impede Thermal Transport Across Metal//iGa2O3 Interfaces

期刊

NANO LETTERS
卷 19, 期 12, 页码 8533-8538

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b03017

关键词

Phonon; thermal boundary resistance; gallium oxide; thermal management; power electronics; interfacial

资金

  1. Northrop Grumman Mission Systems' University Research Program

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The impact of chemical reactions on the thermal boundary conductance (TBC) of Au/metal contact/beta-Ga2O3 layered samples as a function of contact thickness is investigated using high-throughput thermoreflectance measurements. A maximum in TBC of 530 +/- 40 (260 +/- 25) MW/m(2) K is discovered for a Cr (Ti) contact at a thickness of 2.5 (5) nm. There is no local maximum for a Ni contact, for which the TBC saturates at 410 +/- 35 MW/m(2) K for thicknesses greater than 3 nm. Relative to the Au/beta-Ga2O3 interface, which has a TBC of 45 +/- 7 MW/m(2) K, these nanoscale contacts enhance TBC by factors of 6 to 12. The TBC maximum only exists for metals capable of forming oxides that are enthalpically favorable compared to beta-Ga2O3. The formation of Cr2O3, via oxygen removal from the beta-Ga2O3 substrate, is confirmed by TEM analysis. The reaction-formed oxide layer reduces the potential TBC and leads to the maximum, which is followed by a plateau at a lower value, as its thickness saturates due to passivation. Many advanced materials are prone to similar chemical reactions, impacting contact engineering and thermal management for a variety of applications.

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