Molecular dynamics simulations of extended defects and their evolution in 3C–SiC by different potentials

Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC : Reconciling Theory and Experiments

(2019) Emilio Scalise et al.   Physical Review Applied

Planar impacts on nanocrystalline SiC: a comparison of different potentials

(2018) Wanghui Li et al.   JOURNAL OF MATERIALS SCIENCE

From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

(2018) F. La Via et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Shock induced damage and fracture in SiC at elevated temperature and high strain rate

(2018) Wanghui Li et al.   ACTA MATERIALIA

Molecular dynamics simulation study of deformation mechanisms in 3C–SiC during nanometric cutting at elevated temperatures

(2016) Saeed Zare Chavoshi et al.   MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates

(2014) R. Vasiliauskas et al.   JOURNAL OF CRYSTAL GROWTH

Anisotropy of single-crystal 3C–SiC during nanometric cutting

(2013) Saurav Goel et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Melting kinetics of bulk SiC using molecular dynamics simulation

(2013) WanJun Yan et al.   Science China-Physics Mechanics & Astronomy

Electron backscattering from stacking faults in SiC by means ofab initioquantum transport calculations

(2012) I. Deretzis et al.   PHYSICAL REVIEW B

Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates

(2010) N. Piluso et al.   APPLIED PHYSICS LETTERS

Evidence of electrical activity of extended defects in 3C–SiC grown on Si

(2010) X. Song et al.   APPLIED PHYSICS LETTERS

Interfacial Properties of Oxides Grown on 3C-SiC by Rapid Thermal Processing

(2010) A. Constant et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Energetics and structure of ⟨0 0 1⟩ tilt grain boundaries in SiC

(2010) Marcin Wojdyr et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

(2009) C. Wen et al.   JOURNAL OF APPLIED PHYSICS

Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films

(2009) Alexander A. Lebedev et al.   PHYSICA B-CONDENSED MATTER

Nitric Acid Oxidation of 3C-SiC to Fabricate MOS Diodes with a Low Leakage Current Density

(2007) Masao Takahashi et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY