Grain Size Engineering of Ferroelectric Zr-doped HfO2 for the Highly Scaled Devices Applications

标题
Grain Size Engineering of Ferroelectric Zr-doped HfO2 for the Highly Scaled Devices Applications
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 11, Pages 1868-1871
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2019-10-01
DOI
10.1109/led.2019.2944491

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