4.8 Article

Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

期刊

BIOSENSORS & BIOELECTRONICS
卷 150, 期 -, 页码 -

出版社

ELSEVIER ADVANCED TECHNOLOGY
DOI: 10.1016/j.bios.2019.111903

关键词

PEC aptamer biosensor; 2D-C3N4 interlayer; Semiconductor/DNA interface reconciliation; Ultrahigh sensitivity; Charge transfer

资金

  1. National Natural Science Foundation of China [41506093]
  2. Fundamental Research Funds for the Central Universities
  3. Innovation Fund of Xidian University

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In this work, we fabricate a novel bismuth vanadate/two dimensional-carbon nitride/deoxyribonucleic acid (BiVO4/2D-C3N4/DNA) aptamer photoelectrochemical (PEC) sensor, and this sensor provides a record detection sensitivity area (5 x 10(-7) mu g/L - 10 mu g/L) for Microcystin-LR (MC-LR). Meanwhile, except for MC-LR detection, this sensor presents highly sensitivity for tumor marker, heavy metal ion, antibiotic also by changing the DNA aptamer. Photo charge dynamic and theory calculation results reveal that 2D-C3N4 is a key material for multifunctional interface reconciliation of this PEC aptamer sensor. Firstly, it can serve as photogenerated hole oriented-transfer medium from the BiVO4 photoanode to the detective target; In addition, 2D-C3N4 with large area of pi electron cloud can fix the DNA aptamer parallelly by pi-pi bonding with the nucleic acid in the DNA aptamer to shorten the hole transfer distance from the semiconductor to target. So that, a record MC-LR detection sensitivity has been achieved by the 2D-C3N4 modified BiVO4/DNA aptamer sensor.

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