Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy

(2019) Yasuto Akatsuka et al.   Applied Physics Express

High-Voltage Regrown Nonpolar ${m}$ -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches

(2019) M. Monavarian et al.   IEEE ELECTRON DEVICE LETTERS

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

(2019) Hanxiao Liu et al.   APPLIED PHYSICS LETTERS

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics

(2019) Kai Fu et al.   IEEE ELECTRON DEVICE LETTERS

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

(2018) Yuji Zhao et al.   Advances in Optics and Photonics

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

(2018) Kai Fu et al.   APPLIED PHYSICS LETTERS

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

(2017) Zongyang Hu et al.   IEEE ELECTRON DEVICE LETTERS

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study of etching-induced damage in GaN by hard X-ray photoelectron spectroscopy

(2011) Tetsuo Narita et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electrostatic energy profiles at nanometer-scale in group III nitride semiconductors using electron holography

(2010) F.A. Ponce   ANNALEN DER PHYSIK