Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride

We propose that the carbon dimer defect CBCN in hexagonal boron nitride gives rise to the ubiquitous narrow luminescence band with a zero-phonon line of 4.08 eV (usually labeled the 4.1 eV band). Our first-principles calculations are based on hybrid density functionals that provide a reliable description of wide bandgap materials. The calculated zero-phonon line energy of 4.3 eV is close to the experimental value, and the deduced Huang-Rhys factor of S approximate to 2.0, indicating modest electron-phonon coupling, falls within the experimental range. The optical transition occurs between two localized pi-type defects states, with a very short radiative lifetime of 1.2 ns, in very good accord with experiments. Published under license by AIP Publishing.