期刊
APPLIED PHYSICS EXPRESS
卷 12, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/ab4a8e
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资金
- Air Force Research Lab (AFRL)
- Defense Advanced Research Projects Agency (DARPA) [FA8650-18-1-7810]
We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low-loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top-down processing and a chemical epilayer release technique. After transfer the -3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 mu m diameter circular mesas under -15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance. (C) 2019 The Japan Society of Applied Physics
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