期刊
ADVANCED FUNCTIONAL MATERIALS
卷 29, 期 50, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201905806
关键词
Bi2O2Se nanosheets; broadband phototransistors; CVD growth
类别
资金
- National Key Research and Development Program of China [2016YFA0300803]
- National Natural Science Foundation of China [61427812, 11774160, 61674157, 61904079, 11574137]
- Open Fund of the State Key Laboratory of Integrated Optoelectronics [IOSKL2019KF05]
- Fund of SITP Innovation Foundation [CX-235]
- Leverhulme Trust [LTSRF1819\15\12]
- Royal Society [IEC\ NSFC\181680]
- Program for high-level Entrepreneurial and Innovative Talent Introduction, Jiangsu Province
- UK EPSRC [EP/S010246/1]
- Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics
- EPSRC [EP/S010246/1] Funding Source: UKRI
Bi2O2Se, a high-mobility and air-stable 2D material, has attracted substantial attention for application in integrated logic electronics and optoelectronics. However, achieving an overall high performance over a wide spectral range for Bi2O2Se-based devices remains a challenge. A broadband phototransistor with high photoresponsivity (R) is reported that comprises high-quality large-area (approximate to 180 mu m) Bi2O2Se nanosheets synthesized via a modified chemical vapor deposition method with a face-down configuration. The device covers the ultraviolet (UV), visible (Vis), and near-infrared (NIR) wavelength ranges (360-1800 nm) at room temperature, exhibiting a maximum R of 108 696 A W-1 at 360 nm. Upon illumination at 405 nm, the external quantum efficiency, R, and detectivity (D*) of the device reach up to 1.5 x 10(7)%, 50055 A W-1, and 8.2 x 10(12) Jones, respectively, which is attributable to a combination of the photogating, photovoltaic, and photothermal effects. The devices reach a -3 dB bandwidth of 5.4 kHz, accounting for a fast rise time (tau(rise)) of 32 mu s. The high sensitivity, fast response time, and environmental stability achieved simultaneously in these 2D Bi2O2Se phototransistors are promising for high-quality UV and IR imaging applications.
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