期刊
ADVANCED ELECTRONIC MATERIALS
卷 5, 期 10, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201900407
关键词
ferroelectrics; gap state; off-stoichiometry; oxygen vacancy; photovoltaic
资金
- Natural Science Foundation of China [11874257, 11474199, 51332009]
- DOE Office of Science [DE-AC02-06CH11357]
- Chun-Tsung Program
Recently, the visible or even-to-near-infrared light absorbing perovskite ABO(3) solid state solutions, show promising application in solar cells and multienergy harvesters or sensors by simultaneously introducing transition metal and oxygen vacancies. However, the existence of oxygen vacancies fundamentally causes photoexcited carrier trapping and large leakage current. Therefore, it is still challenging to limit oxygen vacancies while maintaining low bandgap and high ferroelectricity. Here, an efficient charge compensation strategy by finely adjusting the ion ratio on the A-site to obtain an oxygen-vacancy-free relaxer ferroelectric is demonstrated in the system of NaxBiyTiO3-BaTi0.5Ni0.5O3, where y > x. It is found that the oxygen-vacancy-free composition still yields strong visible-near-infrared-light-absorbing and enhanced photoresponse, in which the photocurrent density doubles from approximate to 0.16 to approximate to 0.32 mu A cm(-2). A new bandgap tuning mechanism is proposed according to the local structural information of Ni ions obtained via extended X-ray absorption fine structure. Moreover, this work succeeds in establishing the relationship between the concentration of oxygen vacancies and ferroelectric/piezoelectric properties of NaxBiyTiO3-BaTi0.5Ni0.5O3. This research points out a promising route to the material design of bandgap engineered ferroelectrics with controlled defects, which is expected to benefit a wide range of functional energy conversion devices.
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