期刊
SMALL
卷 15, 期 44, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201902735
关键词
graphitic carbon nitride; hydrothermal exfoliation; metal-free semiconductors; quantum dot light-emitting diodes
类别
资金
- State Commission of Science & Technology of China [2016YFC0104100]
- Jiangsu Province Science & Technology Department [SBE2016750057]
- Fundamental Research Funds for the Central University [021314380081]
- Jiangsu Province Graduate Training Innovation Project
- NRF Grant - Korea Government [NRF-2016R1A2B4011474]
- Jiangsu Specially-Appointed Professor award
Here, a simplified synthesis of graphitic carbon nitride quantum dots (g-C3N4-QDs) with improved solution and electroluminescent properties using a one-pot methylamine intercalation-stripping method (OMIM) to hydrothermally exfoliate QDs from bulk graphitic carbon nitride (g-C3N4) is presented. The quantum dots synthesized by this method retain the blue photoluminescence with extremely high fluorescent quantum yield (47.0%). As compared to previously reported quantum dots, the g-C3N4-QDs synthesized herein have lower polydispersity and improved solution stability due to high absolute zeta-potential (-41.23 mV), which combine to create a much more tractable material for solution processed thin film fabrication. Spin coating of these QDs yields uniform films with full coverage and low surface roughness ideal for quantum dot light-emitting diode (QLED) fabrication. When incorporated into a functional QLED with OMIM g-C3N4-QDs as the emitting layer, the LED demonstrates approximate to 60x higher luminance (605 vs 11 Cd m(-2)) at lower operating voltage (9 vs 21 V), as compared to the previously reported first generation g-C3N4 QLEDs, though further work is needed to improve device stability.
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