4.8 Article

One-Pot Exfoliation of Graphitic C3N4 Quantum Dots for Blue QLEDs by Methylamine Intercalation

期刊

SMALL
卷 15, 期 44, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201902735

关键词

graphitic carbon nitride; hydrothermal exfoliation; metal-free semiconductors; quantum dot light-emitting diodes

资金

  1. State Commission of Science & Technology of China [2016YFC0104100]
  2. Jiangsu Province Science & Technology Department [SBE2016750057]
  3. Fundamental Research Funds for the Central University [021314380081]
  4. Jiangsu Province Graduate Training Innovation Project
  5. NRF Grant - Korea Government [NRF-2016R1A2B4011474]
  6. Jiangsu Specially-Appointed Professor award

向作者/读者索取更多资源

Here, a simplified synthesis of graphitic carbon nitride quantum dots (g-C3N4-QDs) with improved solution and electroluminescent properties using a one-pot methylamine intercalation-stripping method (OMIM) to hydrothermally exfoliate QDs from bulk graphitic carbon nitride (g-C3N4) is presented. The quantum dots synthesized by this method retain the blue photoluminescence with extremely high fluorescent quantum yield (47.0%). As compared to previously reported quantum dots, the g-C3N4-QDs synthesized herein have lower polydispersity and improved solution stability due to high absolute zeta-potential (-41.23 mV), which combine to create a much more tractable material for solution processed thin film fabrication. Spin coating of these QDs yields uniform films with full coverage and low surface roughness ideal for quantum dot light-emitting diode (QLED) fabrication. When incorporated into a functional QLED with OMIM g-C3N4-QDs as the emitting layer, the LED demonstrates approximate to 60x higher luminance (605 vs 11 Cd m(-2)) at lower operating voltage (9 vs 21 V), as compared to the previously reported first generation g-C3N4 QLEDs, though further work is needed to improve device stability.

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