4.7 Review

Salt-assisted chemical vapor deposition of two-dimensional materials

期刊

SCIENCE CHINA-CHEMISTRY
卷 62, 期 10, 页码 1300-1311

出版社

SCIENCE PRESS
DOI: 10.1007/s11426-019-9525-y

关键词

salt-assisted; chemical vapor deposition; 2D materials; transition metal dichalcogenides; non-layered materials

资金

  1. National Natural Science Foundation of China [21825103, 51727809]
  2. Fundamental Research Funds for the Central University [2019kfyXMBZ018]
  3. China Postdoctoral Science Foundation [2018M642832]

向作者/读者索取更多资源

Two-dimensional (2D) materials with atomic thickness are promising candidates for the applications in future semiconductor devices, owing to their fascinating physical properties and superlative optoelectronic performance. Chemical vapor deposition (CVD) is considered to be an efficient method for large-scale preparation of 2D materials toward practical applications. However, the high melting points of metal precursors and the thermodynamics instabilities of metastable phases limit the direct CVD synthesis of plenty of 2D materials. The salt has recently been introduced into the CVD process, which proved to be effective to address these issues. In this review, we highlighted the latest progress in the salt-assisted CVD growth of 2D materials, including layered and non-layered crystals. Firstly, strategies of adding salts are summarized. Then, the salt-assisted growth of various layered materials is presented, emphasizing on the transition metal chalcogenides of stable and metastable phases. Furthermore, strategies to grow ultrathin non-layered materials are discussed. We provide viewpoints into the techniques of using salt, the effects of salt, and the growth mechanisms of 2D crystals. Finally, we offer the challenges to be overcome and further research directions of this emerging salt-assisted CVD technique.

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