期刊
PHYSICA B-CONDENSED MATTER
卷 576, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.physb.2019.411713
关键词
Oxygen partial pressure; ZnO:Eu3+; Pulsed laser deposition
资金
- DST, New Delhi, India [DST/INSPIRE/04/2015/001497]
- National Research Foundation of South Africa [115126, 84415]
- South African Research Chairs Initiative of Department of Science and Technology
- Korea Agency for Infrastructure Technology Advancement (KAIA) [115126] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Eu3+ doped ZnO (ZnO:Eu3+) thin films were prepared by pulsed laser deposition at different oxygen partial pressures. The all ZnO:Eu3+ thin films have a hexagonal structure. The morphology and roughness of the ZnO: Eu3+ thin film were also dependent on the partial pressure of the oxygen. The strong band to band emission was observed with the weak emission of both Eu3+ and defects. The intensity of the band emission peaks has increased with an increase in the oxygen partial pressure.
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