Assembly of large-area reduced graphene oxide films for the construction of Z-scheme over single-crystal porous Bi5O7I nanosheets

In this work, we have firstly achieved the construction of bismuth oxyiodide (Bi5O7I)/reduced graphene oxide (rGO)/ZnO Z-scheme photoelectrochemical (PEC) system without backward reactions through loading large-area ZnO quantum dots (QE)s)/rGO films on Bi5O7I nanosheets. Single-crystal porous Bi5O7I nanosheets with numerous oxygen vacancies (OVs) were firstly fabricated through the calcination of BiOI in reductive glycols. The single-crystal facilitates charge transport, nanoporous structure promotes light absorption and OVs improves charge separation efficiency. As a result, single-crystal porous Bi5O7I nanosheets with OVs exhibited higher PEC performance than other morphologies reported before. Moreover, The PEC activity of Bi5O7I can be further enhanced through loading large-area ZnO QDs/rGO films to construct a pure Z-scheme charge transfer system, which not only achieves efficient separation of electron-hole pairs but also retains its excellent redox ability. To the best of our knowledge, the photocurrent density of Bi5O7I/rGO/ZnO heterostructures is the highest among Bi5O7I-based samples. For comparison, an opposite Z-scheme model has also been built up by replacing Bi5O7I with WO3, in which the photocurrent density decreased conversely. Therefore, it can be known that a pure Z-scheme system without backward reactions can be successfully prepared through loading ZnO QDs/rGO films on photoelectrodes. (C) 2019 Elsevier Inc. All rights reserved.