期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 802, 期 -, 页码 70-75出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2019.06.215
关键词
CsPbBr3 thin films; Self-powered photodetector; Pulse laser deposition; Heterojunction; Responsivity
资金
- National Natural Science Foundation of China [11504155, 61705096]
High-quality CsPbBr3 thin films have been fabricated by pulse laser deposition (PLD) technique and severed as an interlayer for n-ZnO/p-GaN heterojunction ultraviolet (UV) photodetector. The self-powered photodetectors based on n-ZnO/CsPbBr3/p-GaN heterojunction exhibited a high peak responsivity of 44.53 mA/W and detectivity of 2.03X10(12) cm.Hz(1/2 )W(-1) under zero bias voltage, which has increased similar to 30 and similar to 178 times than that of the n-ZnO/p-GaN device, respectively. Meanwhile, the photodetector with excellent stable and reproducible characteristics were also demonstrated and the photoresponse time has been drastically shortened by inserting the CsPbBr3 interlayer. The key role of the CsPbBr3 interlayer, as a carrier transport layer, has been demonstrated by the energy-band diagram. The enhanced performances of n-ZnO/p-GaN heterojunction make them promising application in self-powered photodetectors. (C) 2019 Published by Elsevier B.V.
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